NCE60P04Y mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltag.
General Features
* VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V
* High density cell .
Image gallery
Download